Anti-fuse memory cell

ABSTRACT

An anti-fuse memory cell having a variable thickness gate oxide. The variable thickness gate oxide is formed by depositing a first oxide over a channel region of the anti-fuse memory cell, removing the first oxide in a thin oxide area of the channel region, and then thermally growing a second oxide in the thin oxide area. The remaining first oxide defines a thick oxide area of the channel region. The second oxide growth occurs under the remaining first oxide, but at a rate less than thermal oxide growth in the thin oxide area. This results in a combined thickness of the first oxide and the second oxide in the thick oxide area being greater than second oxide in the thin oxide area.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation in part of U.S. application Ser. No. 13/662,842, filed on Oct. 29, 2012, which is a continuation in part of U.S. application Ser. No. 13/219,215, filed on Aug. 26, 2011, now issued as U.S. Pat. No. 8,313,987 on Nov. 20, 2012, which is a continuation of U.S. patent application Ser. No. 12/814,124, filed on Jun. 11, 2010, now issued as U.S. Pat. No. 8,026,574 on Sep. 27, 2011, which is a continuation of U.S. patent application Ser. No. 11/762,552 filed on Jun. 13, 2007 now issued as U.S. Pat. No. 7,755,162 on Jul. 13, 2010, which is a continuation in part of U.S. patent application Ser. No. 10/553,873 filed on Oct. 21, 2005, now U.S. Pat. No. 7,402,855 issued Jul. 22, 2008, which is a national stage entry of PCT Serial No. CA2005/000701 filed on May 6, 2005, which claims priority to U.S. Provisional Patent Application No. 60/568,315 filed on May 6, 2004, all of which are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates generally to non-volatile memory. More specifically, the invention is directed to anti-fuse memory cell structures.

BACKGROUND OF THE INVENTION

Over the past 30 years, anti-fuse technology has attracted significant attention of many inventors, IC designers and manufacturers. An anti-fuse is a structure alterable to a conductive state, or in other words, an electronic device that changes state from not conducting to conducting. Equivalently, the binary states can be either one of high resistance and low resistance in response to electric stress, such as a programming voltage or current. There have been many attempts to develop and apply anti-fuses in microelectronic industry, but the most successful anti-fuse applications to date can be seen in FGPA devices manufactured by Actel and Quicklogic, and redundancy or option programming used in DRAM devices by Micron.

A summary of the progression of anti-fuse development follows as evidenced by issued United States patents.

Anti-fuse technology development started with U.S. Pat. No. 3,423,646, which disclosed a thin film formable diode PROM built as an array of horizontal and vertical conductors with a thin dielectric (aluminium oxide) between the conductors, at their crossings. Such NVM memory was programmed through perforation of the dielectric in some of the crossings. A formable diode would act as an open circuit until a voltage of sufficient magnitude and duration is applied to the crossing to cause forming of the aluminum oxide intermediate layer at which time device would act as a tunnelling diode.

U.S. Pat. No. 3,634,929 disclosed an inter-metal semiconductor anti-fuse array, the structure of the anti-fuse consisting of a thin dielectric capacitor (AlO2, SiO2 or Si3N4) utilizing two (Al) conductors located above and connected to the semiconductor diode.

A programmable dielectric ROM memory structure using a MOS capacitor and a MOS switching element was shown in U.S. Pat. No. 4,322,822 (McPherson). This cell was formed as a standard gate-oxide-over-substrate capacitor having a gate connected to a MOS transistor using a buried contact. In order to lower the oxide breakdown voltage, which needed to be smaller for the anti-fuse capacitor then for the MOS switch, a V-shaped grove in the capacitor area was proposed. Since the capacitor was formed between the poly gate and the grounded p-type substrate, the rupture voltage had to be applied to the capacitor through an access transistor. The Gate/Drain and Gate/Source edges of the access transistors were located at the second field oxide, much thicker then the gate oxide in the channel area, which greatly improved Gate/S-D breakdown voltage.

U.S. Pat. No. 4,507,757 (McElroy) proposed a method for lowering gate oxide breakdown voltage through avalanche junction breakdown. Although the original McElroy ideas evolved around using gated diodes to locally induce avalanche breakdown, which in turn lowered dielectric rupture voltage by enhanced electron tunnelling, he actually introduced or embodied other and perhaps more important elements to anti-fuse technology: (a) Dual gate oxide anti-fuse: access transistor gate oxide thicker then anti-fuse dielectric. McElroy's dual gate oxide process steps are: initial gate oxidation, etching areas for thinner gate oxide and subsequent gate oxidation. This procedure is now used in standard CMOS technologies for “I/O” and “1T” devices. (b) A “common-gate” (planar DRAM like) anti-fuse connection where access transistor connects to anti-fuse diffusion (Drain) node and all the anti-fuse gates are connected together. This is opposite to McPherson arrangement and results in much denser cell since the buried contact is eliminated. (c) Limiting resistor between common anti-fuse gate and external ground. (d) Two-terminal anti-fuse MOS device (a half transistor): McElroy concluded that only two terminals are needed in anti-fuse capacitor: D and G. The Source is not really needed for anti-fuse programming or operation and can be fully isolated from the active area. The bulk connection does not play any role either except for the avalanche breakdown. So the source role is limited to collecting carriers from the avalanche breakdown should the local substrate potential increase to forward bias the emitter of a parasitic n-p-n device formed by D, B and S.

It wasn't until 1985 when U.S. Pat. No. 4,543,594 (Mohsen) proposed an anti-fuse design suitable for redundancy repair. As such application requires much lower density than PROM, it was easier to supply external high voltage necessary to rupture the oxide without actually passing this voltage through the access transistors. Mohsen's anti-fuse structure consisted of a thin oxide (50-150 A SiO2) polysilicon capacitor over a doped region. He believed that silicon from the substrate or silicon from the electrode where a polysilicon electrode is used melts into pin holes in the insulative layer to provide the conductor, and his test data showed that where the oxide layer is approximately 100 A thick and has an area between 10 to 500 um², fusion occurred at a voltage of 12 to 16 volts. The current required to cause this fusion is less than 0.1 uA/um2 of capacitor area, and the resulting fused link has a resistance of approximately 0.5 to 2K ohms. A link, once fused, can handle currents of up to 100 milliamps at room temperature for approximately one second before it heals to an open fuse. Taking into account electron migration wear-out, the predicted wear-out lifetime of a link, once fused, is substantially greater than 3E8 hours.

The possibility of anti-fuse self-healing under current stress appeared to be the main roadblock for application of this technology in such areas like PROMs, PLDs and FPGAs, where constant fuse stress was required. The anti-fuse healing problem was resolved later by Mohsen and others at Actel in U.S. Pat. No. 4,823,181. Actel teaches the way to implement a reliable programmable low impedance anti-fuse element by using an ONO structure instead of silicon dioxide. Actel's method required an ohmic contact after dielectric rupture. This was achieved either by using heavily doped diffusion, or by putting an ONO dielectric between two metal electrodes (or silicide layers). The necessity of an Arsenic doped bottom diffusion electrode was revised later in U.S. Pat. No. 4,899,205, where it was allowed for either top-poly or bottom-diffusion to be highly doped.

U.S. Pat. No. 5,019,878 taught that if the drain is silicided, the application of a programming voltage in the range of ten to fifteen volts from the drain to the source reliably forms a melt filament across the channel region. A gate voltage may be applied to control the specific transistors to melt. IBM discovered similar effect by proposing a channel anti-fuse in U.S. Pat. No. 5,672,994. They discovered that with 0.5 um technology, the BVDSS for the nmos transistor is not only in the order of 6.5V, but once the S-D punch through occurs it creates permanent damage resulting in few kilo ohms leakage between the source and the drain.

U.S. Pat. Nos. 5,241,496 and 5,110,754 to Micron, disclosed a DRAM cell based anti-fuse (trench and stack). In 1996, Micron introduced a well-to-gate capacitor as an anti-fuse in U.S. Pat. No. 5,742,555. U.S. Pat. No. 6,087,707 proposed an N-Well coupled anti-fuse as a way to eliminate undercut defects associated with polysilicon etching. U.S. Patent Application No. 2002/0027,822 proposed a similar anti-fuse structure, but with n+ regions removed to create an asymmetrical (“unbalanced”) high voltage access transistor using the N-well as a drain electrode.

U.S. Pat. No. 6,515,344 proposed a range of P+/N+ anti-fuse configurations, implemented using a minimum size gate between two opposite type diffusion regions.

U.S. Pat. No. proposed an nmos anti-fuse built in an isolated P-well using a standard Deep N-Well process. Another variant of Deep N-Well based anti-fuses is disclosed in U.S. Pat. No. 6,611,040.

U.S. Patent Application Nos. 2002,0074,616 and 2004,0023,440 disclose other Deep N-Well anti-fuses. These anti-fuses consisted of a capacitor featuring direct tunnelling current rather then Fowler Nordheim current. These applications confirm that anti-fuse performance is generally improved for thinner gate oxide capacitors (approx 20 A, which is typical for transistors in 0.13 um process).

U.S. Pat. No. 6,580,145 disclosed a new version of a traditional anti-fuse structure utilizing dual gate oxides, with the thicker gate oxide being used for nmos (or pmos) access transistors and the thinner gate oxide for the capacitor. The N-Well (or P-Well) is used as a bottom plate of the anti-fuse capacitor.

The idea of creating a source drain short through the gate by separately breaking the S-G and D-G dielectric regions of the transistor is disclosed in U.S. Pat. No. 6,597,234.

U.S. Patent Publication No. 20040004269 disclosed an anti-fuse built from a MOS transistor having gate connected to the gate of a capacitor, degenerated by a thinner gate oxide and heavy doping under the channel through additional implantation (a diode). The rupture voltage is applied to a bottom plate of the capacitor.

In U.S. Pat. No. 6,667,902 (Peng) Peng attempts to improve a classic planar DRAM-like anti-fuse array by introducing “row program lines” which connect to the capacitors and run parallel to the word lines. If decoded, the row program lines can minimize exposure of access transistors to a high programming voltage, which would otherwise occur through already programmed cells. Peng and Fong further improve their array in U.S. Pat. No. 6,671,040 by adding a variable voltage controlling programming current, which allegedly controls the degree of gate oxide breakdown, allowing for multilevel or analog storage applications.

Most recently, U.S. Patent Application No. 2003/0202376 (Peng) shows a memory array using a single transistor structure. In the proposed memory cell, Peng eliminates the LDD diffusion from a regular NMOS transistor. A cross-point array structure is formed of horizontal active area (S/D) stripes crossing vertical poly gate stripes. Drain contacts are shared between neighbouring cells and connected to horizontal wordlines. Source regions are also shared and left floating. Peng assumes that if the LDD diffusion is omitted, the gate oxide breakdown location will be far enough from the drain area and a local N+ region will be created rather than D-G (drain-gate) short. If such a region was created, the programmed cells could be detected by positively biasing the gate and sensing the gate to drain current. In order to reduce the G-D or S-D (source-drain) short probability, Peng proposes increasing gate oxide thickness at the G-D and S_D edges through modification of a gate sidewall oxidation process. Peng's array requires that both source and drain regions be present in the memory cells, row wordlines coupled to transistor drain regions, and the column bitlines formed from transistor gates. Such an unusual connection must be very specific to Peng's programming and reading method, requiring a decoded high voltage (8V in 1.8V process) applied to all drain lines except for the one to be programmed. The decoded high voltage (8V) is applied to the gates of the column to be programmed, while the other gates are kept at 3.3V.

Although Peng achieves a cross-point memory architecture, his array requires CMOS process modifications (LDD elimination, thicker gate oxide at the edge) and has the following disadvantages: (a) All row decoders, column decoders and sense amplifiers must switch a wide range of voltages: 8V/3.3V/0V or 8V/1.8V/0V. (b) During a program operation, the 3.3V column drivers are effectively shorted to 8V row drivers or 0V drivers through programmed cells. This puts many limits on the array size, affects driver size and impacts reliability and effectiveness of programming. (c) Every program operation requires that all the array active areas (except for the programmed row) are biased at 8V. This leads to large N++ junction leakage current, and again limits array size. (d) The gate oxide breaking spot is assumed to be located far enough from the drain area so the punch through is not happening at 8V bias. At the same time, the transistor must operate correctly at 1.8V biasing—connecting to the channel area. This is not achievable without significant process modification. (e) Peng assumes that the gate oxide will not break on the source or drain edge if the LDD is not present. It is however known in the art that the S/D edges are the most likely locations for the oxide breakdown because of defects and electric field concentration around sharp edges.

Peng attempts to solve some of the high voltage switching problems in U.S. Patent Application No. 2003/0206467. The high blocking voltage on wordlines and bitlines is now replaced with “floating” wordlines and bitlines, and restrictions on the distance from the channel to the source and drain regions has been changed. Although floating wordlines and bitlines may ease problems with high voltage switching, they do not solve any of the above mentioned fundamental problems. Additionally they introduce severe coupling problems between the switched and the floating lines.

U.S. Patent Application Publication No. 20060292755 (Parris) introduces a well-to-gate capacitor as an anti-fuse element having a tunable, variable gate oxide thickness formed through a thermal oxide process, in an attempt to increase reliability in programming of the anti-fuse element, by localizing the area of oxide breakdown (or rupture). The state of the Parris anti-fuse capacitor is detected by sensing a current in the well, that flows from its top plate through a programmed conductive link in the oxide breakdown region, and into the well which acts as the bottom plate. Hence the Parris anti-fuse capacitor does not function as a transistor since it does not have “channel” region. Because of the well sensing scheme, Parris teaches that each anti-fuse capacitor is formed in an isolated well, while the corresponding access transistors are formed outside of the well. Such a design would not be suited for high density applications since the access transistors must be spaced from the well according to minimum design rule requirements. Thus the Parris memory array has low area efficiency.

Today, anti-fuse developments concentrate around 3-dimentional thin film structures and special inter-metal materials. All these anti-fuse technologies require additional processing steps not available in standard CMOS process, prohibiting anti-fuse applications in typical VLSI and ASIC designs, where programmability could help overcome problems with ever shrinking device life cycles and constantly rising chip development costs. Therefore there is an apparent need in the industry for a reliable anti-fuse structures utilizing standard CMOS process.

All the prior art anti-fuse cells and arrays either require special processing steps or suffer from high voltage exposure of MOS switching elements, leading to manufacturability and reliability problems. They are also limited to low density memory applications, with the exception of Peng's single transistor cell, which in turn has very doubtful manufacturability.

It is, therefore, desirable to provide a simple and reliable, high density, anti-fuse array architecture suitable for implementation in standard CMOS technology, without any additional processing steps.

SUMMARY OF THE INVENTION

It is an object of the present invention to obviate or mitigate at least one disadvantage of the previous anti-fuse arrays by providing an anti-fuse memory cell having high reliability by minimizing a thin gate oxide area of a variable thickness gate oxide formed between a polysilicon gate and the active area of the substrate.

In a first aspect, there is provided a method of forming a variable thickness gate oxide for an anti-fuse transistor. The method includes growing a first oxide in a channel region of the anti-fuse transistor; removing the first oxide from a thin oxide area of the channel region; thermally growing a second oxide in the thin oxide area and in a thick gate oxide area of the channel region under the first oxide, and a combination of the first oxide and the second oxide in the thick gate oxide area has a thickness greater than the second oxide in the thin oxide area; and forming a diffusion region adjacent the thick oxide area for receiving current from the channel region. According to one embodiment of the first aspect, the second oxide under the first oxide is thinner than the second oxide in the thin oxide area. According to another embodiment of the first aspect, the method further includes forming a bitline contact in electrical contact with the diffusion region for sensing a current from the common gate when a conductive link is formed between the channel and the common gate.

In yet another embodiment of the first aspect, thermally growing includes growing the second oxide in the thin oxide area at a first rate and growing the second oxide in the thick gate oxide area at a second rate less than the first rate. In this embodiment, growing the second oxide in the thin oxide area at a first rate includes consuming a substrate surface of the thin oxide area to a first depth, and growing the second oxide in the thick gate oxide area includes consuming a substrate surface of the thick gate oxide area to a second depth less than the first depth. Thermally growing can further include forming an angled oxide area between the thick gate oxide area and the thin gate oxide area, where the angled oxide area has a thickness different from the combination of the first oxide and the second oxide in the thick gate oxide area, and from the second oxide in the thin oxide area. In this embodiment, the method further includes forming a common gate over the first oxide the second oxide, and the angled oxide area.

In a second aspect, there is provided an anti-fuse memory cell having a variable thickness gate oxide. The anti-fuse memory cell includes a channel region in a substrate, a first oxide, a second oxide, a diffusion region, isolation, and a gate over the first oxide and the second oxide. The first oxide is formed in a thick oxide area of the channel region. The second oxide is formed in a thin oxide area of the channel region and in the thick oxide area underneath the first oxide. The diffusion region is adjacent to the thick oxide area for receiving current from the channel region. The isolation is adjacent to the thin gate oxide area. The gate is formed over the first oxide and the second oxide.

According to an embodiment of the second aspect, the second oxide under the first oxide is thinner than the second oxide in the thin oxide area, and a combination of the first oxide and the second oxide in the thick oxide area has a thickness greater than the second oxide in the thin oxide area. In this embodiment, the second oxide in the thin oxide area extends into the substrate to a first depth, and the second oxide in the thick oxide area extends into the substrate to a second depth less than the first depth.

According to another embodiment of the second aspect, the anti-fuse memory cell further includes an angled oxide area between the thick gate oxide area and the thin gate oxide area, where the angled oxide area has a thickness different from the combination of the first oxide and the second oxide in the thick gate oxide area, and different from the second oxide in the thin oxide area.

In a further embodiment of the secont aspect, the gate is connected to a wordline and the diffusion region is connected to a bitline. Alternately, the anti-fuse memory cell includes an access transistor adjacent to the diffusion region, and another diffusion region adjacent to the access transistor, and the another diffusion region is connected to a bitline. In this particular embodiment, the access transistor has a gate oxide thickness corresponding to the combination of the first oxide and the second oxide in the thick gate oxide area.

Other aspects and features of the present invention will become apparent to those ordinarily skilled in the art upon review of the following description of specific embodiments of the invention in conjunction with the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention will now be described, by way of example only, with reference to the attached Figures, wherein:

FIG. 1 is a circuit diagram of a DRAM-type anti-fuse cell;

FIG. 2 is a planar layout of the DRAM-type anti-fuse cell of FIG. 1;

FIG. 3 is a cross-sectional view of the DRAM-type anti-fuse cell of FIG. 2 along line x-x;

FIG. 4 is a cross-sectional view of an anti-fuse transistor according to an embodiment of the present invention;

FIG. 5A is a planar layout of the anti-fuse transistor of FIG. 4;

FIG. 5B is a planar layout of the anti-fuse transistor of FIG. 4 showing an alternate OD2 mask configuration;

FIG. 6 is a flow chart of a method for forming a variable thickness gate oxide for the anti-fuse transistor of the present invention;

FIG. 7A-7C illustrate the formation of the variable thickness gate oxide in accordance with steps of the flow chart of FIG. 6;

FIG. 8A-8C illustrate an alternate formation method of the variable thickness gate oxide;

FIG. 9 is a magnified illustration of the variable thickness gate oxide shown in FIG. 8C;

FIG. 10 is a cross sectional view of an anti-fuse transistor memory cell fabricated according to the alternate fabrication method shown in FIGS. 8A-8C;

FIG. 11A is a planar layout of an anti-fuse transistor according to an embodiment of the present invention;

FIG. 11B is a cross-sectional view of the anti-fuse transistor of FIG. 11A taken along line A-A;

FIG. 12 is an enlarged planar layout of the anti-fuse transistor of FIG. 11A;

FIG. 13 is a planar layout of a memory array using the anti-fuse transistor of FIG. 11A according to an embodiment of the present invention;

FIG. 14 is an enlarged planar layout of an anti-fuse transistor, according to another embodiment of the present invention;

FIG. 15 is a planar layout of a memory array using the anti-fuse transistor of FIG. 14 according to an embodiment of the present invention;

FIG. 16A is a planar layout of a two-transistor anti-fuse memory cell according to an embodiment of the present invention;

FIG. 16B is a cross-sectional view of the two-transistor anti-fuse memory cell of FIG. 16A taken along line B-B;

FIG. 16C is a cross-sectional view of an alternate two-transistor anti-fuse memory cell formed using a thermal oxide process;

FIG. 17 is a planar layout of a memory array using the two-transistor anti-fuse memory cell of FIGS. 16A and 16B, according to an embodiment of the present invention;

FIG. 18 is a planar layout of a memory array using the two-transistor anti-fuse memory cell according to an alternate embodiment of the present invention;

FIG. 19-23 are planar layouts of alternate anti-fuse memory cells, according to embodiments of the present invention; and

FIG. 24-27 are planar layouts of alternate two-transistor anti-fuse memory cells, according to embodiments of the present invention.

DETAILED DESCRIPTION

Generally, the present invention provides a variable thickness gate oxide anti-fuse transistor device that can be employed in a non-volatile, one-time-programmable (OTP) memory array application. The anti-fuse transistor can be fabricated with standard CMOS technology, and is configured as a standard transistor element having a source diffusion, gate oxide and a polysilicon gate. The variable gate oxide underneath the polysilicon gate consists of a thick gate oxide region and a thin gate oxide region, where the thin gate oxide region acts as a localized breakdown voltage zone. A conductive channel between the polysilicon gate and the channel region can be formed in the localized breakdown voltage zone during a programming operation. In a memory array application, a wordline read current applied to the polysilicon gate can be sensed through a bitline connected to the source diffusion, via the channel of the anti-fuse transistor. More specifically, the present invention provides an effective method for utilizing split channel MOS structures as an anti-fuse cell suitable for OTP memories.

In the following description the term MOS is used to denote any FET or MIS transistor, half-transistor or capacitor structure. In order to simplify the description of the embodiments, references to gate oxides from this point forward should be understood to include dielectric materials, oxide, or a combination of oxide and dielectric materials.

As previously discussed, a DRAM-type memory array using a planar capacitors as an anti-fuse instead of as a storage capacitor is already known, as demonstrated in U.S. Pat. No. 6,667,902. FIG. 1 is a circuit diagram of such a memory cell, while FIGS. 2 and 3 show the planar and cross-sectional views respectively, of the known anti-fuse memory cell of FIG. 1. The memory cell of FIG. 1 includes a pass, or access transistor 10 for coupling a bitline BL to a bottom plate of anti-fuse device 12. A wordline WL is coupled to the gate of access transistor 10 to turn it on, and a cell plate voltage Vcp is coupled to the top plate of anti-fuse device 12 for programming anti-fuse device 12.

It can be seen from FIGS. 2 and 3 that the layout of access transistor 10 and anti-fuse device 12 is very straight-forward and simple. The gate 14 of access transistor 10 and the top plate 16 of anti-fuse device 12 are constructed with the same layer of polysilicon, which extend across active area 18. In the active area 18 underneath each polysilicon layer, is formed a thin gate oxide 20, also known as a gate dielectric, for electrically isolating the polysilicon from the active area underneath. On either side of gate 14 are diffusion regions 22 and 24, where diffusion region 24 is coupled to a bitline. Although not shown, those of skill in the art will understand that standard CMOS processing, such as sidewall spacer formation, lightly doped diffusions (LDD) and diffusion and gate silicidation, can be applied. While the classical single transistor and capacitor cell configuration is widely used, a transistor-only anti-fuse cell is further desirable due to the semiconductor array area savings that can be obtained for high-density applications. Such transistor-only anti-fuses must be reliable while simple to manufacture with a low cost CMOS process.

According to an embodiment of the present invention, FIG. 4 shows a cross-sectional view of an anti-fuse transistor that can be manufactured with any standard CMOS process. In the presently shown example, the anti-fuse transistor is almost identical to a simple thick gate oxide, or input/output MOS transistor with one floating diffusion terminal. The disclosed anti-fuse transistor, also termed a split-channel capacitor or a half-transistor, can be reliably programmed such that the fuse link between the polysilicon gate and the substrate can be predictably localized to a particular region of the device. The cross-section view of FIG. 4 is taken along the channel length of the device, which in the presently described embodiment is a p-channel device. Those of skill in the art will understand that the present invention can be implemented as an n-channel device.

Anti-fuse transistor 100 includes a variable thickness gate oxide 102 formed on the substrate channel region 104, a polysilicon gate 106, sidewall spacers 108, a field oxide region 109 a diffusion region 110, and an LDD region 114 in the diffusion region 110. A bitline contact 116 is shown to be in electrical contact with diffusion region 110. The variable thickness gate oxide 102 consists of a thick oxide and a thin gate oxide such that a portion of the channel length is covered by the thick gate oxide and the remaining portion of the channel length is covered by the thin gate oxide. Generally, the thin gate oxide is a region where oxide breakdown can occur. The thick gate oxide edge meeting diffusion region 110 on the other hand, defines an access edge where gate oxide breakdown is prevented and current between the gate 106 and diffusion region 110 is to flow for a programmed anti-fuse transistor. While the distance that the thick oxide portion extends into the channel region depends on the mask grade, the thick oxide portion is preferably formed to be at least as long as the minimum length of a high voltage transistor formed on the same chip.

In a preferred embodiment, the diffusion region 110 is connected to a bitline through a bitline contact 116, or other line for sensing a current from the polysilicon gate 106, and can be doped to accommodate programming voltages or currents. This diffusion region 110 is formed proximate to the thick oxide portion of the variable thickness gate oxide 102. To further protect the edge of anti-fuse transistor 100 from high voltage damage, or current leakage, a resistor protection oxide (RPO), also known as a salicide protect oxide, can be introduced during the fabrication process to further space metal particles from the edge of sidewall spacer 108. This RPO is preferably used during the salicidiation process for preventing only a portion of diffusion region 110 and a portion of polysilicon gate 106 from being salicided.

It is well known that salicided transistors are known to have higher leakage and therefore lower breakdown voltage. Thus having a non-salicided diffusion region 110 will reduce leakage. Diffusion region 110 can be doped for low voltage transistors or high voltage transistors or a combination of the two resulting in same or different diffusion profiles.

A simplified plan view of the anti-fuse transistor 100 is shown in FIG. 5 a. Bitline contact 116 can be used as a visual reference point to orient the plan view with the corresponding cross-sectional view of FIG. 4. The active area 118 is the region of the device where the channel region 104 and diffusion region 110 is formed, which is defined by an OD mask during the fabrication process. The dashed outline 120 defines the areas in which the thick gate oxide is to be formed via an OD2 mask during the fabrication process. More specifically, the area enclosed by the dashed outline 120 designates the regions where thick oxide is to be formed. OD simply refers to an oxide definition mask that is used during the CMOS process for defining the regions on the substrate where the oxide is to be formed, and OD2 refers to a second oxide definition mask different than the first. Details of the CMOS process steps for fabricating anti-fuse transistor 100 will be discussed later. According to an embodiment of the present invention, the thin gate oxide area bounded by edges of the active area 118 and the rightmost edge of the OD2 mask, is minimized. In the presently shown embodiment, this area can be minimized by shifting the rightmost OD2 mask edge towards the parallel edge of active area 118.

FIG. 5 b is an alternate illustration of anti-fuse 100 of FIG. 5 a. In FIG. 5 a, the OD2 mask 120 is shown as a large area that may extend to cover the entire memory array. As previously discussed, OD2 mask 120 defines the areas in which the thick gate oxide is to be formed. Formed within OD2 mask 120 are openings 121 defining areas where no thick gate oxide is to be formed. Instead, thin gate oxide will be grown in the area defined by openings 121. Those skilled in the art will understand that in a memory array configuration where a plurality of anti-fuse memory cells 100 are arranged in a row, one rectangular opening can overlap all the memory cells to define the thin gate oxide area for each active area 118.

Programming of anti-fuse transistor 100 is based on gate oxide breakdown to form a permanent link between the gate and the channel underneath. Gate oxide breakdown conditions (voltage or current and time) depend primarily on i) gate dielectric thickness and composition, ii) defect density, and iii) gate area, gate/diffusion perimeter. The combined thick and thin gate oxide of anti-fuse transistor 100 results in a locally lowered gate breakdown voltage, in particular an oxide breakdown zone, in the thin gate oxide portion of the device. In otherwords, the disclosed structure assures that the oxide breakdown is limited to the thinner gate oxide portion.

Additionally, the anti-fuse transistor embodiments of the present invention take advantage of a typically prohibited CMOS fabrication design rule for gate oxide design layout and formation to enhance gate oxide breakdown performance. All gate oxide processing steps in today's CMOS processes assume and are optimized for uniform gate oxide thickness within the active gate area. By introducing the variable thickness gate oxide devices into the standard CMOS flow, additional defects and electrical field disturbances are created at the boundary between the thick and thin gate oxides. Those defects may include, but are not limited to: oxide thinning, plasma etching of silicon at the boundary, residues from cleaning process and silicon recess due to different thermal oxidation rates between unmasked and partially masked regions. All these effects increase trap and defect density at the thin oxide boundary, leading to increased leakage and locally lowered breakdown voltage. Therefore, a low voltage, compact anti-fuse structure can be created without any process modification.

In a typical CMOS process, the diffusion regions, LDD and channel implantation are different for thin gate oxide transistors and thick gate oxide transistors. According to an embodiment of the present invention, the diffusion regions, LDD and the thin gate oxide channel implantation of the anti-fuse transistors can be either type; the low voltage type corresponding to the thin gate oxide, or the high voltage type corresponding to the thick gate oxide (I/O oxide), or both, provided that the resulting thin gate oxide threshold voltage is not greater in magnitude than the thick gate oxide threshold voltage.

A method of creating a variable thick gate oxide from a standard CMOS process according to an embodiment of the present invention, is to utilize a well known two-step oxidation process. A flow chart outlining this process is shown in FIG. 6, while FIGS. 7A-7C show the various stages of the variable thickness gate oxide formation corresponding to specific steps in the process.

First, an intermediate gate oxide is grown in all active areas determined by the OD mask in step 200. In FIG. 7A, this is shown as the formation of intermediate gate oxide 300 on the substrate, over the channel region 302. In following step 202, the intermediate gate oxide 300 is removed from all the designated thin gate oxide areas using an OD2 mask. FIG. 7B shows the remaining portion of intermediate gate oxide 300 and the future thin oxide area 304. In the last gate oxide formation step 204, a thin oxide is grown again in all active areas as originally defined by the OD mask. In FIG. 7C, the thin gate oxide 306 is grown over the intermediate gate oxide 300 and the thin oxide area 304. In the present embodiment, the thick gate oxide is formed by a combination of removing intermediate gate oxide and growing thin gate oxide over the remaining intermediate gate oxide.

As a result, the formed thick gate oxide area covered by the OD2 mask during step 202 will have a gate oxide thickness being a combination of the intermediate gate oxide 300 and the final thin gate oxide 306. The same procedure can be extended for more than two oxidation steps, or other equivalent procedures can be used to produce two or more gate oxide thicknesses on the same die, which is determined by at least one thick gate oxide mask OD2.

Typically, the OD2 mask is considered a non-critical masking step, a low resolution mask is used and the design rules require a large margin of the OD2 mask over active gate areas and particularly, do not have provisions for the OD2 mask ending within the active gate area. According to the present invention, the OD2 mask ends within the active gate area creating a split-channel anti-fuse structure that features thicker gate oxide on the drain (i.e. diffusion contact) side and thinner gate oxide on the opposite side (either channel or non-connected source side). In principle, this technology requires that the gate length (polysilicon line width) should be larger then the process minimum and depends on actual OD2 mask tolerances, but otherwise does not require any process or mask grade change. The minimum gate length for the split channel anti-fuse structure can be approximated as a sum of minimum gate length for the thick and thin gate oxide. Those skilled in the art will appreciate that accurate calculations can be made based on mask tolerances, and the gate length can be minimized by tightening OD2 mask tolerances.

Once the variable thickness gate oxide has been formed, additional standard CMOS processing steps can be employed at step 206 to complete the anti-fuse transistor structure as shown in FIG. 4. This can include formation of the polysilicon gate, LDD regions, sidewall spacers, RPO, and diffusion regions, and salicidation, for example. According to a preferred embodiment of the presently discussed process, a salicidiation step is included to salicide the polysilicon gate and the floating diffusion region of the anti-fuse transistor. An RPO is formed over the diffusion region before hand to protect it from the salicidation process. As previously mentioned, the salicided floating diffusion region will enhance oxide breakdown in the region.

In the process of FIG. 6, a thin oxide is grown over the substrate and intermediate gate oxide 300 in step 204, as shown in FIG. 7C. In an alternate method for forming a dual thickness gate oxide, the thin oxide is thermally grown from the substrate surface. Thermal oxide growth is known in the art, as demonstrated by previously mentioned U.S. Patent Application Publication No. 20060292755, which uses a thermal oxide growth process to form the gate oxide. This alternate method is described with reference to the flow chart of FIG. 6 and FIGS. 8A-8C that show the various stages of the variable thickness gate oxide formation corresponding to specific steps in the process.

The first step is the same as previously described, where an intermediate gate oxide is grown in all active areas determined by the OD mask in step 200. In FIG. 8A, this is shown as the formation of intermediate gate oxide 310 on the substrate, over the channel region 312. In following step 202, the intermediate gate oxide 310 is removed from all the designated thin gate oxide areas using an OD2 mask. FIG. 8B shows the remaining portion of intermediate gate oxide 310 and the future thin oxide area 314. It is noted in FIG. 8B that the vertical edge on the right side of intermediate gate oxide 310 may be “undercut” during removal of the intermediate gate oxide 310 from thin oxide area 314 during a wet etching process. In the last gate oxide formation step 204, a thin oxide is thermally grown in the entire channel region 312 of the cell. Thermal oxide growing is a process known in the art, where oxygen atoms combine with silicon atoms of the substrate to form silicon dioxide. The silicon dioxide molecules grow on the surface of the substrate, and each successive layer of silicon dioxide molecules “pushes” previously grown layers upwards. Because this silicon dioxide growth mechanism requires oxygen to reach the silicon substrate surface, its growth rate will be affected by intervening structures which slow the oxygen atoms from reaching the substrate surface.

While anti-fuse transistors can have thin gate oxides formed using this process, any other transistors outside of the memory array can have their gate oxides formed at the same time, meaning that they would have the same gate oxide thickness as the thin oxide formed in step 204. These transistors can be core transistors, typically used in logic circuits or any other circuits where low voltages and high speed operation are desired.

FIG. 8C shows the result of thermally growing oxide in the channel region 312. In FIG. 8C, the thermally grown oxide is shown as thermal oxide 316, which has “pushed” or displaced the intermediate gate oxide 310 upwards and away from the substrate surface 318. Because of the presence of intermediate gate oxide 310 previously formed on substrate surface 318 in FIG. 8A, the growth rate of thermal oxide 316 under intermediate gate oxide 310 is slower than on the exposed portion of substrate surface 318 of FIG. 8B. For this reason, thermal oxide 316 has a thicker portion and a thinner portion. It is noted that the thermal oxide growing process consumes some of the substrate, thereby resulting in a substrate surface having different surface levels. This effect is also referred to as “silicon loss” during a thermal oxidation process. In other words, the substrate surface does not have a uniform surface level in the memory cell area. In the present embodiments, there are portions of thermal oxide 316 formed beneath the surrounding substrate surface 318.

FIG. 9 is a magnified illustration of the variable thickness gate oxide shown in FIG. 8C. In FIG. 9, three different regions of the variable thickness gate oxide are identified. Starting from the left side of the channel region is the thick gate oxide area 320, followed by an oxide angled area 322, which is followed by a thin gate oxide area 324. While oxide angled area 322 is shown to be distinct from thick gate oxide area 320, oxide angled area 322 can be considered as a part of thick gate oxide area 320. This is because both areas 320 and 322 are heterogeneous layers having thicknesses consisting of a combination of the intermediate gate oxide 310 and thermal oxide 316. In contrast, thin gate oxide area 324 is a homogeneous layer of thermal oxide 316. The thick gate oxide area 320 when combined with an overlying polysilicon gate or other conductive gate, forms an access transistor positioned in series with the anti-fuse device. The anti-fuse device is described in further detail below.

The thick gate oxide area 320 is the combined thicknesses of the thinner portion of the thermal oxide 316 and the intermediate gate oxide 310 shown in FIG. 8C. The thin gate oxide area 324 is the thicker portion of the thermal oxide 316 in thin oxide area 314 shown in FIG. 8C. The oxide angled area 322 is a transition area between the thick gate oxide area 320 and the thin gate oxide area 324 and may have a thickness different from both the thick gate oxide area 320 and the thin gate oxide area 324. In particular, the oxide angled area 322 is characterized as being thinner than the thick gate oxide area 320, but thicker than the thin gate oxide area 324. Furthermore, the thickness of oxide angled area 322 is variable along the entire oxide angled area 322, meaning that the thickness is not constant between the top sloping edge of oxide angled area 322 and the bottom edge of oxide angled area 322 that consists of substantially horizontal segments on either side of a sloping segment. During programming, a conductive link can be formed in the angled area 322 or the thin gate oxide area 324. Therefore, angled area 322 and thin gate oxide area 324 are considered the anti-fuse device of the anti-fuse memory cell. The thick gate oxide of the variable thickness gate oxide is characterized by having the substantially the same thickness 326, while the thin gate oxide of the variable thickness gate oxide is characterized by having the substantially the same thickness 328. The oxide angled area 322 is characterized by being angled relative to the thick gate oxide area 320 and the thin gate oxide area 324, and has a thickness 330 that differs from both thicknesses 326 and 328.

It is noted that transistors requiring thick gate oxides outside of the memory array can be formed at the same time the thick gate oxide area 320 is formed by thermal oxide growth. Such transistors can include input/output transistors that typically operate at voltages higher than core transistors. Therefore, core transistors and input/output transistors of the memory device can be formed during formation of the anti-fuse memory cell transistors in the memory array. Obvious cost advantages are realized since the same mask set used for forming the memory array anti-fuse memory cells is also used to form the core transistors and the input/output transistors, or vice versa.

The oxide angled area 322 is characterized by having a variable thickness that has a maximum thickness at the virtual interface between thick gate oxide area 320 and oxide angled area 322, which decreases to have a minimum thickness at the virtual interface between the oxide angled area 322 and the gate oxide area 324. The channel region 312 is therefore located at different depths relative to the substrate surface 318 due to the different thermal oxide growth rates and the consumption of the substrate surface 318. As shown in FIG. 9, the thick gate oxide area 320 has a bottom side formed at a depth “a” from substrate surface 318, while thin gate oxide area 324 has a bottom side formed at depth “b” from substrate surface 318. It is generally known that if a bare silicon surface is oxidized, less than half of the oxide thickness will lie below the original surface, and just more than half will be above it. For example, some empirical measurements have approximated that about 46% of the total oxide thickness lies below the original surface, while the remaining 54% lies above the original surface. Relative to the bottom side of thick gate oxide area 320, the bottom side of thin gate oxide area 324 extends to a further depth “c” into the substrate. Within the oxide angled area 322, the channel is angled at region 332. Therefore, the depth of “b” of the thin gate oxide area 324 is approximately “a”+“c”.

One advantage of using a thermal oxide process to fabricate the variable thickness gate oxide shown in FIG. 9 is the angled channel resulting from oxide angled area 322. The distribution of an electrical field resulting from a voltage applied to an overlying polysilicon gate (not shown) is more dense at curves and corners, which enhances oxide breakdown in those areas, when compared to a “flat” channel region.

It is noted that the relative thicknesses of the oxides shown in FIGS. 8A to 8C are not to scale, as the illustrations are meant to show the general fabrication principles at work. In experimental fabricated anti-fuse memory devices using the presently described method, the combined thinner portion of the thermal oxide 316 and the intermediate gate oxide 310 has been measured to be about 65 angstroms, while the oxide in the thin oxide area 314 has been measured to be about 25 angstroms.

FIG. 10 is a cross sectional view of a fully fabricated anti-fuse transistor memory cell fabricated according to the alternate fabrication method shown in FIGS. 8A-8C. The anti-fuse memory cell 350 has a variable thickness gate oxide 352 similar to the one shown in FIG. 9, a gate 354 formed over the variable thickness gate oxide 352, sidewall spacers 356, a diffusion region 358 and STI oxide 360. Diffusion region 358 can have an LDD 362 and a bitline contact 364 connected to a bitline (not shown).

One issue to consider for the above-mentioned anti-fuse transistors is the retention, or reliability or the unprogrammed cells. The described anti-fuse memory cell is programmed by forming a conductive channel between the polysilicon gate and the channel through the thin gate oxide. The resultant programmed state can be detected in a read operation by applying a read voltage to the gate and sensing the voltage of the bitline the anti-fuse is connected to. The typical read voltage is 1.5V to 2.0V depending on process technology. This voltage may exceed the maximum voltage allowed for a DC bias on the gate of the low voltage transistor part of the cell (for example 1.1V for a 1V devices). In otherwords, the read voltage may be sufficiently high to program cells which are to remain in the unprogrammed state. One factor for maximizing reliability of unprogrammed anti-fuse cells is to minimize the area of the thin gate oxide of the variable thickness gate oxide.

FIG. 11A shows a planar view of an anti-fuse transistor having a minimized thin gate oxide area that can be manufactured with any standard CMOS process, according to an embodiment of the present invention. For example, the fabrication steps outlined in FIG. 6 can be used, including the embodiment employing the thermal oxide fabrication steps. FIG. 11B shows a cross-sectional view of the anti-fuse transistor of FIG. 11A, taken along line A-A. Anti-fuse 400 of FIG. 11A is very similar to anti-fuse 100 shown in FIG. 5 a, except that the area of the thin gate oxide of the variable thickness gate oxide beneath the polysilicon gate is minimized. This is in stark contrast to the anti-fuse cell described by Parris, in which the thin gate oxide portion is maximized such that it surrounds the thick oxide portion in order to elongate the transition line between the thin and the thick oxide portions.

Anti-fuse transistor 400 includes a variable thickness gate oxide 402, formed on the substrate channel region 404, a polysilicon gate 406, sidewall spacers 408, a diffusion region 410, and an LDD region 412 in the diffusion region 410. The variable thickness gate oxide 402 consists of a thick oxide and a thin gate oxide such that a majority area of the channel length is covered by the thick gate oxide and a small minority area of the channel length is covered by the thin gate oxide. As shown in FIG. 11A, the thick gate oxide area 414 covers most of the active area 416 under polysilicon gate 406, except for a small square thin gate oxide area 418. If anti-fuse 400 is fabricated with the previously described alternate thermal oxide fabrication steps, then thin gate oxide area 418 corresponds to thin gate oxide area 324 of FIG. 9. This means that the oxide angled area 322 and thick gate oxide area 320 of FIG. 9 are located within thick gate oxide area 414 of FIG. 11A. Anti-fuse transistor 400 can be a non-volatile memory cell, and hence will have a bitline contact 420 in electrical contact with diffusion region 410. The formation of the shape and size of thick gate oxide area 414 and thin gate oxide area 418 is discussed in further detail below.

FIG. 12 is an enlarged planar view of the anti-fuse transistor of FIG. 11A to highlight the planar geometry of the variable thickness gate oxide. Anti-fuse transistor 500 consists of an active area 502 with overlying polysilicon gate 504. In FIG. 12, shading from the polysilicon gate has been removed to clarify the features underneath it. The variable thickness gate oxide is formed between the active area 502 and polysilicon gate 504, and consists of a thick gate oxide area 506. According to the present embodiment, thick gate oxide area 506 can be considered as at least two rectangular segments. Those skilled in the art will understand that the delineation of the segments is a visual breakdown of the thick gate oxide shape into constituent rectangular shapes. The first thick gate oxide segment 508 extends from a first end of the channel region, coinciding with the left-most edge of the polysilicon gate 504, to a second end of the channel region. Segment 508 can be seen as a rectangular shaped area having a width less than the width of the channel region. The second thick gate oxide segment 510 is adjacent to the first segment 508, and extends from the same first end of the channel region to a predetermined distance of the channel length. The second thick gate oxide segment 510 has a width substantially equal to the difference between the channel width and the width of the first segment 508.

Because the second thick gate oxide segment 510 ends in the channel region, the remaining area is also rectangular in shape as it is bound on two sides by segments 508 and 510, and on the other two sides by the edges of the active area 502. This remaining area is the thin gate oxide area 512. While the OD2 mask 513 defines the areas within which thick oxide is to be formed, the OD2 mask 513 has a rectangular opening 514 in which no thick oxide is to be formed. Thin gate oxide will be grown within the area defined by opening 514. Expressed in the alternate, the areas outside of the rectangular outline 514 is where thick gate oxide is formed. With reference to the alternate fabrication method using thermal oxide fabrication steps, opening 514 is used to define where thermally grown thin oxide is to be formed. Then segments 508 and 510 are the areas within which thick oxide is a combined thickness of thermally grown oxide and previously formed intermediate oxide. Dashed outline 513 can represent an OD2 mask used during the fabrication process, which is positioned such that a corner of the opening 514 overlaps a corner of the active area 502 underneath the polysilicon gate 504. The dimensions of opening 514 can be selected to be any size, but has a preferred set of dimensions, as will be discussed with reference to FIG. 13. In the single transistor anti-fuse memory cell, a bitline contact 516 is formed for electrical connection to a bitline (not shown).

FIG. 13 is a planar layout of a memory array consisting of the anti-fuse memory cell of FIG. 12 according to an embodiment of the present invention. The memory array has anti-fuse memory cells arranged in rows and columns, where polysilicon gates 504, formed as continuous polysilicon lines, extend over the active areas 502 of each anti-fuse memory cell in a row. Each polysilicon line is associated with a logical wordline WL0, WL1, WL2 and WL3. In the presently shown embodiment, each active area 502 has two polysilicon gates 504, thereby forming two anti-fuse transistors that share the same bitline contact 516 and active area 502. It is noted that all the anti-fuse memory cells of the memory array are formed in a single common well that is formed before any of the anti-fuse memory cell structures are formed.

The openings 514 in the OD2 mask 513 for defining the areas where the thin gate oxide is to be grown is rectangular in shape and sized and positioned such that each of its four corners overlaps with the corner areas of four anti-fuse transistor active areas 502, thereby defining the thin gate oxide areas 512. Ideally, the thin gate oxide area has at least one dimension below the minimum feature size of the fabrication process which can be obtained through the overlap between two mask regions. One mask region is the diffusion mask, also called the active area mask, and the second mask region is the rectangular opening 514 in the OD2 mask 513. Both masks are of a non-critical width, meaning that they are greater than the minimum allowable width. Hence, by positioning the overlap of the two masks, the area of the thin gate oxide areas 512 can have dimensions approximately equal to or below the minimum feature size of the given fabrication process, or technology. Therefore, the dimensions of rectangular shaped opening 514 is selected based on the spacing between horizontally adjacent active areas 502 and the spacing between vertically adjacent active areas 502, such that the overlap area between the corners of the opening 514 and the diffusion mask for defining the active areas 502 is smaller than or equal to the minimum feature size of the fabrication technology.

The dimensions of opening 514 are selected to minimize the square or rectangular shaped thin gate oxide areas 512. Those skilled in the art will understand that the selected dimensions will take into account alignment error and fabrication anomalies such as cornering of the 90 degree edges. A high degree of accuracy for the fabrication of the thin gate oxide area 512 can be obtained by using a high grade mask. A high grade mask is provided by using higher quality glass, materials and/or mask printing equipment.

Therefore, the reliability of unprogrammed anti-fuse cells having this minimized feature size thin gate oxide area 512 is greatly improved. The shape of the thin gate oxide area 512 is rectangular, or square, resulting in a minimized area. According to alternate embodiments, instead of having a single rectangular shaped opening 514 overlap with four anti-fuse active areas 502 as shown in FIG. 13, multiple smaller openings can be used. For example, an opening can be shaped to overlap only two horizontally adjacent active areas 502. Or, an opening can be shaped to overlap only two vertically adjacent active areas 502. Furthermore, individual rectangles larger in size than the desired thin gate oxide area 512 can be used to overlap each active area 502. While any number of rectangles of any size are contemplated by the previously shown embodiment, the thin gate oxide can be triangular in shape.

The anti-fuse transistors are programmed by rupturing the thin gate oxide, preferably at the thin/thick gate oxide boundary. This is accomplished by applying a high enough voltage differential between the gate and the channel of the cells to be programmed and a substantially lower voltage differential, if any, on all other cells. Therefore, once a permanent conductive link is formed, a current applied to the polysilicon gate will flow through the link and the channel to the diffusion region, which can be sensed by conventional sense amplifier circuits. For example, a VPP high voltage level can be applied to a polysilicon gate 504 while a lower voltage such as ground is applied to its corresponding bitline. Memory cells not to be programmed will have their bitlines biased to a voltage higher than ground, such as VDD for example. Although programming circuitry is not shown, those of skill in the art will understand that such circuits can be coupled to the bitlines, and incorporated into the wordline driver circuits. Reading an anti-fuse memory cell can be done by precharging the bitlines to ground and applying a read voltage, such as VDD, to the polysilicon gates. A programmed anti-fuse having a conductive link will pull its corresponding bitline towards VDD. An unprogrammed anti-fuse with an absence of a conductive link will behave like a switched capacitor, featuring very low leakage current. Therefore, the bitline voltage will not change substantially, if at all. The voltage change can be sensed by a bitline sense amplifier.

FIG. 14 is an enlarged planar layout of an anti-fuse transistor according to another embodiment of the present invention. Anti-fuse transistor 600 is virtually identical to anti-fuse transistor 500, and therefore has the same active area 502, polysilicon gate 504, and bitline contact 516. Anti-fuse transistor 600 has a differently shaped variable thickness gate oxide. The thick gate oxide area 602 can be seen as being composed of at least two rectangular segments and a triangular segment. A first thick gate oxide segment 604 extends from a first end of the channel region, coinciding with the left-most edge of the polysilicon gate 504, to a second end of the channel region. Segment 604 can be seen as a rectangular shaped area having a width less than the width of the channel region. The second thick gate oxide segment 606 is adjacent to the first segment 604, and extends from the same first end of the channel region to a predetermined distance of the channel length. The second thick gate oxide segment 606 has a width substantially equal to the difference between the channel width and the width of the first segment 604. The third gate oxide segment 608 is triangular in shape and has its 90 degree sides adjacent to the first thick gate oxide segment 604 and the second thick gate oxide segment 606. Segment 606 can include segment 608, such that the predetermined distances is set by the diagonal edge of segment 608. The remaining triangular area having 90 degree sides formed by the edges of the active area 502 is the thin gate oxide area 610.

The dashed diamond-shaped area 612 defines openings in the OD2 mask 513 in which the thin gate oxide is to be grown. Expressed in the alternate, the areas outside of the diamond-shaped outline 612 and within OD2 mask 513 is where thick gate oxide is formed. Dashed outline 612 is the opening in the OD2 mask 513 that is used during the fabrication process, and positioned such that an edge of the opening 612 overlaps a corner of the active area 502 underneath the polysilicon gate 504. With reference to the alternate fabrication method using thermal oxide fabrication steps, opening 612 is used to define where thermally grown thin oxide is to be formed. Then segments 604, 606 and 608 are the areas within which thick oxide is a combined thickness of thermally grown oxide and previously formed intermediate oxide. In the presently shown embodiment, opening 612 is a 45 degree rotated version of opening 514 of FIG. 12. The dimensions of opening 612 can be selected to be any size, but has a preferred set of dimensions, as will be discussed with reference to FIG. 15.

FIG. 15 is a planar layout of a memory array consisting of the anti-fuse memory cell of FIG. 14 according to an embodiment of the present invention. The memory array has anti-fuse memory cells arranged in rows and columns, where polysilicon gates 504, formed as continuous polysilicon lines, extend over the active areas 502 of each anti-fuse memory cell in a row. The layout configuration of the polysilicon gates 504 with respect to the active areas 502 is identical to that shown in FIG. 13.

The openings 612 in OD2 mask 513 for defining the areas where the thin gate oxide is to be grown is diamond-shaped and sized and positioned such that each of its four edges overlaps with the corner areas of four anti-fuse transistor active areas 502, thereby defining the thin gate oxide areas 610. Ideally, each thin gate oxide area 610 is below the minimum feature size of the fabrication process. The overlap is between two mask regions, one being the diffusion mask also called the active area mask, and the second being the OD2 mask 513 having the diamond-shaped openings 612. It is noted that while the openings 612 are considered diamond-shaped relative to the other features, ie. the polysilicon gates 504 and active areas 502 which are defined with lines at 90 degrees to each other. Therefore, relative to these features, the openings 612 are diamond-shaped and preferably has defining lines 45 degrees relative to the defining lines of the polysilicon gates or the active areas 502.

Once again, both masks are of a non-critical width, meaning that they are greater than the minimum allowable width. Hence, by positioning the overlap of the two masks, the area of the thin gate oxide areas 610 can have a size that is approximately equal to or below the minimum feature size of the given fabrication process, or technology. Therefore, the dimensions of the diamond-shaped opening 612 is selected based on the spacing between horizontally adjacent active areas 502 and the spacing between vertically adjacent active areas 502, such that the overlap area between the corners of the openings 612 and the diffusion mask for defining the active areas 502 is smaller than or equal to the minimum feature size of the fabrication technology.

The dimensions of diamond-shaped opening 612 are selected to minimize the triangular shaped thin gate oxide areas 610. The selected dimensions will take into account alignment error and fabrication anomalies, and a high grade mask can be used to tighten fabrication tolerances.

The previously described embodiments of the non-volatile memory cell are directed to a single anti-fuse transistor memory cell. The variable thickness gate oxide can have a thick gate oxide substantially identical to the gate oxides used for high voltage transistors on the same chip. Similarly, the variable thickness gate oxide can have a thin gate oxide substantially identical to the gate oxides used for low voltage transistors on the same chip. Of course, both the thick and thin gate oxide areas can have thicknesses tailored just for the memory array.

According to further embodiments of the present invention, an access transistor can be formed in series with the anti-fuse transistor to provide a two-transistor anti-fuse cell. FIGS. 16A and 16B are illustrations of a two-transistor anti-fuse memory cell according to an embodiment of the present invention.

FIG. 16A shows a planar view of a two-transistor anti-fuse memory cell 700 having a minimized thin gate oxide area that can be manufactured with any standard CMOS process, according to an embodiment of the present invention. FIG. 16B shows a cross-sectional view of the memory cell 700 of FIG. 16A, taken along line B-B. Two-transistor anti-fuse memory cell 700 consists of an access transistor in series with an anti-fuse transistor. The structure of the anti-fuse transistor can be identical to those shown in FIGS. 11A to 15. For the present example, it is assumed that the anti-fuse transistor is identical to the one shown in FIG. 11B, and hence the same reference numerals indicate the same previously described features. More specifically, the structure of the variable thickness gate oxide is the same as shown in FIG. 11B, except that the diffusion region 410 does not have a bitline contact formed on it.

The access transistor has a polysilicon gate 702 overlying a gate oxide 704. Formed to one side of the gate oxide 704 is the shared diffusion region 410. Another diffusion region 706 is formed on the other side of the gate oxide 704, which will have a bitline contact 708 formed on it. Both diffusion regions can have LDD regions adjacent to the vertical edges of gate oxide 704. Those skilled in the art will understand that the diffusion region 706 can be doped identically to diffusion region 410, but can be doped differently depending on the desired operating voltages to be used.

As previously described, the variable thickness gate oxide 402 has a thick gate oxide area and a thin gate oxide area. The thickness of gate oxide 704 will be the same as the thickness of the thick gate oxide area of the variable thickness gate oxide 402. In one embodiment, the access transistor can be fabricated using a high voltage transistor process, or the same process used to form the thick gate oxide area of variable thickness gate oxide 402. The polysilicon gate 702 can be formed concurrently with polysilicon gate 406. The anti-fuse transistor can be fabricated using the previously described methods. More specifically, the variable thickness gate oxide 402 can be formed using the previously described thermal oxide process. Furthermore, the access transistor having gate oxide 704 can be formed at the same time that the thick portion of variable thickness gate oxide 402 is formed. Therefore, the thicknesses of gate oxide 704 and the thick portion of variable thickness gate oxide 402 have substantially the same composition and thickness. This is easily done by patterning the access transistor oxide with the same OD2 mask used for forming the variable thickness gate oxide 402.

The operation of the two-transistor anti-fuse memory cell is similar to that of the previously described single transistor anti-fuse cell. Programming the anti-fuse transistor requires the application of a high voltage to the VCP polysilicon lines while maintaining the bitlines at ground. The access transistor is turned on to couple the shared diffusion region to ground (via a bitline).

FIG. 16C shows a cross-sectional view of a two transistor anti-fuse memory cell, similar to the memory cell 700 of FIG. 16A, manufactured according to the method steps of FIGS. 8A to 8C. The two-transistor anti-fuse memory cell 750 consists of an access transistor in series with an anti-fuse transistor. In this embodiment, the gate oxide of the access transistor is formed at the same time the variable thickness gate oxide is formed. The access transistor has a polysilicon gate 752 overlying a gate oxide 754. Formed to one side of the gate oxide 754 is the shared diffusion region 756. Another diffusion region 758 is formed on the other side of the gate oxide 754, which will have a bitline contact 760 formed on it to make electrical contact with a bitline (not shown). The anti-fuse transistor is identical to the one shown in FIG. 10, which includes a gate 354 formed over a variable thickness gate oxide 352.

As previously discussed and shown in FIG. 8C, the variable thickness gate oxide 352 of FIG. 16C has a thick gate oxide area (shown as area 320 in FIG. 9), which is a combination of intermediate oxide and thermal oxide grown underneath the intermediate oxide. The gate oxide 754 of the access transistor is formed using the same process by which the variable thickness gate oxide 352 is formed. With reference to FIGS. 8A and 8B, the intermediate oxide 310 is patterned for the desired dimensions of the access transistor of memory cell 700 at the same time the thick gate oxide area of the variable thickness gate oxide is patterned. Therefore, when the thermal oxide is grown to form the variable thickness gate oxide as shown in FIG. 8C, the thermal oxide will grow underneath the intermediate oxide of the access transistor. The rate of thermal oxide growth underneath the intermediate oxide of the access transistor will be substantially the same as the thermal oxide growth rate underneath intermediate oxide 310 for the variable thickness gate oxide, and thereby has substantially the same thickness. Because of the silicon loss in the substrate during the thermal oxide growth process, FIG. 16C shows how the gate oxide 754 and the variable thickness gate oxide 352 extend below the substrate surface, which is generally delineated by the top surface of diffusion regions 758 and 756.

FIG. 17 is a planar layout of a memory array consisting of the two-transistor anti-fuse memory cell of FIGS. 16A and 16B according to an embodiment of the present invention. The memory array has memory cells arranged in rows and columns, where the polysilicon gates 406, formed as continuous polysilicon lines, extend over the active areas 416 of each anti-fuse memory cell in a row. Each polysilicon line is associated with a logical cell plate VCP0, VCP1, VCP2 and VCP3. The polysilicon gates 702 are formed as continuous polysilicon lines which extend over the active areas 416 of each anti-fuse memory cell in a row. These polysilicon lines are associated with logical wordlines WL0, WL1, WL2 and WL3. In the presently shown embodiment, each active area 416 has two pairs of polysilicon gates 406/702, thereby forming two anti-fuse transistors that share the same bitline contact 708 and active area 416. It is noted that all the two transistor anti-fuse memory cells of the memory array are formed in a single common well.

The openings 710 in OD2 mask 513 for defining the areas where the thin gate oxide is to be grown is rectangular in shape and sized and positioned such that each of its four corners overlaps with the corner areas of four anti-fuse transistor active areas 416, thereby defining the thin gate oxide areas 418. The same relative mask overlap criteria described for the embodiment FIG. 13 applies to the present embodiment. The dimensions of rectangular shaped openings 710 is selected based on the spacing between horizontally adjacent active areas 416 and the spacing between vertically adjacent active areas 416, such that the overlap area between the corners of the openings 710 and the diffusion mask for defining the active areas 416 is smaller than or equal to the minimum feature size of the fabrication technology.

The embodiment of FIG. 17 is configured to having separately controlled cell plates VCP0, VCP1, VCP2 and VCP3, which allows for improved control to prevent unintentional programming of unselected cells. In an alternate embodiment, VCP0, VCP1, VCP2 and VCP3 can be connected to a common node. In such an embodiment, a specific programming sequence is used to prevent unintentional programming of unselected cells. The programming sequence for the alternate embodiment starts with a precharge of all wordlines and bitlines to a high voltage level, followed by driving the common cell plate to a programming voltage VPP. Using the embodiment of FIG. 16B for example, this would result in precharging the diffusion region 410 to a high voltage level. The wordline to be programmed is selected by deselecting all of the other wordlines, ie, by driving them to a low voltage level for example. Then, the bitline voltage connected to the selected memory cell is driven to a low voltage level, such as ground for example.

FIG. 18 is a planar layout of a memory array consisting of the two-transistor anti-fuse memory cell according to an alternate embodiment of the present invention. The memory array of FIG. 18 is identical to that of FIG. 17, except that a diamond-shaped opening 712 withing OD2 mask 513 is used for defining the thin gate oxide areas of the variable thickness gate oxides. The same relative mask overlap criteria described for the embodiment FIG. 15 applies to the present embodiment.

In the previously disclosed embodiments of the invention, one of the thick gate oxide segments has a length extending from one end of the channel region to the other end of the channel region. According to an alternate embodiment, the length of this thick gate oxide segment is slightly reduced such that it does not fully extend across the full length of the channel region. FIG. 19 is a planar layout of an anti-fuse transistor according to an alternate embodiment of the present invention. In FIG. 19, the anti-fuse transistor 800 includes an active area 802, a polysilicon gate 804 and a bitline contact 806. The active area 802 underneath the polysilicon gate 804 is the channel region of anti-fuse transistor 800. In the present embodiment, OD2 mask 808 defines the area within which thick oxide is to be formed, and includes an “L”-shaped opening 809 overlapping an active area 802, within which thin gate oxide will be grown. This embodiment is similar to that shown in FIG. 12, except that one thick gate oxide segment (ie. 508) extends to a first predetermined distance between the channel region top edge and a second predetermined distance for the adjacent thick gate oxide segment (ie. 510). Therefore, the thin gate oxide will be grown between the first predetermined distance and the channel region top edge, and the second predetermined distance and the channel region top edge.

The previously described embodiments of the anti-fuse transistor have channel regions of a constant width. According to further embodiments, the channel region can have a variable width across the length of the channel region. FIG. 20A is a planar layout of an anti-fuse transistor according to an alternate embodiment of the present invention. In FIG. 20A, the anti-fuse transistor 850 includes an active area 852, a polysilicon gate 854 and a bitline contact 856. The active area 852 underneath the polysilicon gate 854 is the channel region of anti-fuse transistor 850. In the present embodiment, OD2 mask 858 defines the area within which thick oxide is to be formed, and includes a rectangular-shaped opening 859 overlapping the active area 852, within which thin gate oxide will be grown. The active area underneath the polysilicon gate 854 is “L”-shaped, and the rectangular opening 859 has a bottom edge that ends at a predetermined distance the channel region top edge.

FIG. 20B shows the same anti-fuse transistor 850 without shading of the polysilicon gate 854 to illustrate the thick gate oxide segments of the channel region. In the present embodiment, a first thick gate oxide segment 860 extends from the diffusion edge of the channel region to a first predetermined distance defined by the bottom edge of rectangular opening 859. A second thick gate oxide segment is L-shaped, and includes two sub-segments 862 and 864. Those skilled in the art will understand that the delineation of the sub-segments is a visual breakdown of the thick gate oxide segment shape into constituent rectangular shapes. Sub-segment 862 extends from the diffusion edge of the channel region to the first predetermined distance, while sub-segment 864 extends from the diffusion edge of the channel region to a second predetermined distance. The second predetermined distance is between the first predetermined distance and the diffusion edge of the channel region. The thin gate oxide region extends from the first predetermined distance of the first thick gate oxide segment 860 and the sub-segment 862 to the channel region top edge.

FIG. 21A is a planar layout of an anti-fuse transistor according to an alternate embodiment of the present invention. In FIG. 21A, the anti-fuse transistor 880 includes the same features as those in FIG. 17. In the present embodiment, the active area underneath the polysilicon gate 854 is “T”-shaped, and the rectangular opening 859 has a bottom edge that ends at a predetermined distance from the channel region top edge. FIG. 21B shows the same anti-fuse transistor 880 without shading of the polysilicon gate 854 to illustrate the thick gate oxide segments of the channel region.

In the present embodiment, there is a first thick gate oxide segment and a second gate oxide segment. The first thick gate oxide segment is L-shaped, and includes two sub-segments 884 and 886. The second thick gate oxide segment is L-shaped, and includes two sub-segments 888 and 890. Sub-segment 886 extends from the diffusion edge of the channel region to a first predetermined distance, the first predetermined distance corresponding to a bottom edge of the rectangular opening 859. Sub-segment 884 extends from the diffusion edge of the channel region to a second predetermined distance, where the second predetermined distance is between the first predetermined distance and the diffusion edge of the channel region. Sub-segments 888 and 890 of the second thick gate oxide segment are identically configured to sub-segments 884 and 886 respectively. The thin gate oxide region extends from the first predetermined distance of sub-segments 886 and 890 to the channel region top edge.

In the previously described embodiments of FIGS. 20A and 21A, the thin gate oxide area extends from a bottom edge of the rectangular opening 859 to the channel region top edge. Because the channel region has a variable width, in which a portion proximate to the diffusion edge is larger than the portion proximate to the channel region top edge, the overall the thin gate oxide area can be smaller than the anti-fuse embodiment shown in FIG. 5 a. According to further embodiments, the thin gate oxide of the anti-fuse transistor embodiments of FIGS. 20A and 21A are further minimized by applying an OD2 mask having the rectangular or diamond-shaped openings shown in FIGS. 12 and 14.

FIG. 22 is a planar layout of an anti-fuse transistor according to an alternate embodiment of the present invention. Anti-fuse transistor 900 is similar to anti-fuse transistor 850 of FIG. 20B, except that OD2 mask 902 includes rectangular opening 904 shaped and positioned for delineating the thin gate oxide area 906. In the presently shown embodiment, the thick gate oxide comprises a first thick gate oxide segment 908 and a second thick gate oxide segment having sub-segments 862 and 864. Sub-segments 862 and 864 are the same as in the embodiment of FIG. 20B. However, due to the overlapping corners of rectangular opening 904 and the channel region, the first thick gate oxide segment 908 only extends from the diffusion edge to a predetermined distance of the channel length. Hence, the thick gate oxide segment 908 is shorter in length than sub-segment 862. Accordingly, anti-fuse transistor 900 has a smaller thin gate oxide area than the embodiment of FIG. 20A. The application of the OD2 mask 902 with rectangular openings 904 can be applied to anti-fuse transistor 880 of FIG. 21B with the same result.

A further reduction in the thin gate oxide area of the anti-fuse transistors 850 and 880 is obtained by applying diamond-shaped openings in the OD2 mask, as illustrated earlier in FIG. 14. FIG. 23 is a planar layout of an anti-fuse transistor according to an alternate embodiment of the present invention. Anti-fuse transistor 950 is similar to anti-fuse transistor 880 of FIG. 21B, except that OD2 mask 952 includes rectangular opening 954 shaped and positioned for delineating the thin gate oxide area 956. In the presently shown embodiment, the thick gate oxide comprises first and second thick gate oxide segments. The first thick gate oxide segment includes sub-segments 888 and 890, which are the same as in the embodiment of FIG. 21B. The second thick gate oxide segment includes sub-segments 958 and 960.

Due to the overlap of diamond-shaped opening 954 and the channel region, the second thick gate oxide sub-segment 960 only extends from the diffusion edge to a predetermined distance of the channel length, the predetermined distance being defined by the diagonal edge of the diamond-shaped opening 954. Accordingly, anti-fuse transistor 950 can have a smaller thin gate oxide area than the embodiment of FIG. 22. The application of the OD2 mask 952 with diamond-shaped opening 954 can be applied to anti-fuse transistor 850 of FIG. 20B with the same result. It is noted that the dimensions of sub-segments 958 and 960 are selected such that the diagonal edge of opening 954 does not overlap with the channel region covered by sub-segment 958.

While rectangular and diamond-shaped openings in the OD2 mask are disclosed, other opening shapes can be used with equal effectiveness. For example, the openings in the OD2 mask can be hexagon-shaped, octagon-shaped, or even substantially circular after OPC is added. Furthermore a rectangular shaped opening can be rotated by any angle relative to the polysilicon gate.

The previously described embodiments of FIGS. 19-23 are directed to single transistor anti-fuse memory cells. The embodiments of FIGS. 19-23 are applicable to two-transistor anti-fuse cells, in which an access transistor is formed in series with the anti-fuse transistor. FIGS. 24-27 illustrate various embodiments of a two-transistor anti-fuse memory cell having minimized thin gate oxide areas.

FIG. 24 is a planar layout of a two-transistor anti-fuse transistor according to an embodiment of the present invention.

According to further embodiments of the present invention, an access transistor can be formed in series with the anti-fuse transistor to provide a two-transistor anti-fuse cell. FIGS. 16A and 16B are illustrations of a two-transistor anti-fuse memory cell according to an embodiment of the present invention where the channel region has a variable width. Two-transistor anti-fuse memory cell 1000 is similar to the two-transistor cell 700 of FIG. 16A. The access transistor includes active area 1002, a polysilicon gate 1004 and a bitline contact 1006. The anti-fuse transistor includes active area 1002, a polysilicon gate 1008. A common source/drain diffusion region 1010 is shared between the access transistor and the anti-fuse transistor. Underneath the polysilicon gate 1008 and covering the channel region is the variable thickness gate oxide having a thick gate oxide area and a thin gate oxide area. OD2 mask 1012 illustrates the areas in which a thick gate oxide is to be formed, and includes a rectangular-shaped opening 1013 overlapping the active area 852, within which thin gate oxide will be grown. Thin gate oxide area 1014 covers the channel region between the bottom edge of the rectangular opening 1013 and the channel region top edge.

In FIG. 24 the channel region of the anti-fuse transistor has a variable width. In the embodiment of FIG. 25, the channel region of the anti-fuse transistor has a constant width, but is smaller in width than the remainder of the active area and the channel of the access transistor. More specifically, two-transistor anti-fuse memory cell 1050 is similar to memory cell 1000, except that active area 1052 is shaped such that the common source/drain diffusion region 1054 now has a variable width, leaving the channel region of the anti-fuse transistor constant, but smaller in width than the channel region of the access transistor.

FIG. 26 is yet another alternate embodiment of the two-transistor anti-fuse memory cell. Two-transistor anti-fuse memory cell 1100 is similar to two-transistor anti-fuse memory cell 1000 of FIG. 24, except that the active area 1102 is shaped such that the anti-fuse transistor has a “T”-shaped channel region instead of the “L”-shaped channel region. FIG. 27 is similar to the embodiment of FIG. 26, except that two-transistor anti-fuse memory cell 1150 has an active area 1152 shaped such that the anti-fuse transistor has a channel region of a constant width. The common source/drain diffusion region 1154 is “T”-shaped such that it has a portion of narrower width.

The two-transistor anti-fuse memory cell embodiments of FIGS. 24-27 can use OD2 masks having rectangular or diamond-shaped openings positioned to minimize the thin gate oxide areas of the anti-fuse transistors. The anti-fuse memory cell embodiments of FIGS. 19 to 27 can be fabricated with the alternate fabrication process where thermal oxide is grown to form the thick and thin portions of the variable thickness gate oxide.

As shown in the presently described embodiments, a single transistor anti-fuse memory cell and a two-transistor anti-fuse memory cell having high reliability can be manufactured using standard CMOS processes. The masks for defining the active areas and the OD2 masks can be non-critical in size but the positioned overlap between specific areas can result in a thin oxide area with a size less than the minimum feature size for the process technology.

More specifically, the standard CMOS process will require a set of masks for defining the various features of the presently described anti-fuse memory cell embodiments. Each mask will have different quality grades, depending on the features that are to be defined. Generally, higher grade masks are used for defining smaller sized features. Following is an example grading of masks used in the standard CMOS process, where higher numbers designate higher grade masks.

-   -   1. N-well, P-well, Vtp, Vtn, thick gate oxide (OD2) masks     -   2. source/drain implant mask     -   3. contact via mask     -   4. metal 2 layer mask     -   5. diffusion, thin oxide, contact and metal 1 layer masks     -   6. polysilicon mask

The difference between a high grade mask, such as grade level 6, over a low grade mask, such as grade level 1, will be the better glass, materials or use of better printing equipment involved to make it. Different mask grades are used because certain features do not require high accuracy, while others do. As can be appreciated, the effort and cost for producing a high grade mask is substantially more than required for a low grade mask. For example, the lowest grade mask can range between $3 k-$5 k, while the highest grade mask can range between $100 k-$300 k.

It should be noted that design rules for certain features are set up to ensure that a specific area for that feature defined by a mask covers not only the specific area, but has some overlap onto adjacent features. In effect, the adjacent features truly control where the implantation occurs. For example, the OD2 shape will fully cover the 10 transistor area, which is defined by diffusion. Hence, it does not matter where the actual mask shape ends. This is one primary reason why the OD2 mask is a low grade, and consequently, a low cost mask, as there is an allowed margin of error. Furthermore, some aligner machines are capable of achieving 0.06 micron tolerance, but are only used at 0.1 micron as it is deemed sufficient for ion implant masks. For fabricating the anti-fuse transistors and memory arrays shown in FIGS. 4 to 18, the mask shape ends are important for defining the thin gate oxide area. The current grade OD2 mask used for typical CMOS processes can be used for defining the thin gate oxide areas of the described anti-fuse memory cells. However, the margin of error must be taken into account, thereby resulting in a memory cell having a particular minimum size.

According to an embodiment of the present invention, the anti-fuse memory cells of FIGS. 4-18 are fabricated using an OD2 mask having a grade corresponding to the mask grade used for source/drain implants (grade level 2) of the same process. The OD2 mask grade is preferably equivalent to the mask grade used for diffusion implants (grade level 5) of the same process to achieve smaller sized memory cells having high reliability. Therefore, higher density memory arrays, improved yield, improved performance and high reliability are obtained by using a high grade OD2 mask. The accuracy is further improved by ensuring that alignment of the mask is done at the highest possible accuracy level. High alignment accuracy is obtained by using superior lithography equipment, lithography methods and/or different light wavelengths and different mask types, any combination thereof being possible.

The use of a higher grade OD2 mask with optional high accuracy alignment presents advantages for the presently disclosed anti-fuse cell embodiments. More specifically, the more accurately formed mask shape ends using a high grade OD2 mask are advantageously used to minimize specific features such as the thin oxide areas. Since the anti-fuse transistors 500 and 600 should have a minimally sized thin gate oxide area (512 and 610), the use of a high grade OD2 mask allows the thin gate oxide areas to be minimized to improve reliability over the same anti-fuse cell manufactured with a standard low grade OD2 mask.

For the embodiment of FIG. 5A, more accurate overlap of the OD2 shape end/edge underneath the polysilicon gate 106 allows for a minimized thin oxide area under the polysilicon gate. In particular, the thin oxide area will be rectangular in shape, having two opposite sides defined by the width of the active area underneath the polysilicon gate, and another two opposite sides defined by the OD2 mask shape end underneath the polysilicon gate and an edge of the polysilicon gate. The addition of high precision alignment will further minimize the thin oxide area.

For example, an improvement in alignment from +/−0.1 microns to +/−0.06 microns for a 0.20 micron thin oxide area dimension, will allow for a 0.04 micron smaller thin oxide dimension, thereby reducing the dimension to 0.16 microns. This alone will improve the yield and reliability of the anti-fuse memory cell since both yield and reliability depend directly upon the total thin gate oxide area. Yield and reliability improvements are seen even when alignment is improved to +/−0.08 microns for 90 nm and 65 nm processes. The high grade OD2 mask can be used in the process described in FIG. 6 for fabricating the thin and thick gate oxide areas of the anti-fuse transistor.

The drawings of the transistor devices presented in the figures are used to illustrate features of the transistor devices, and are intended to be drawn to scale. Actual fabricated transistor devices including the described features will have dimensions resulting from design choices or the application of design rules imposed by specific fabrication processes.

The presently described embodiments of the invention describe anti-fuse transistors having thin and thick gate oxides. Those skilled in the art will understand that advanced semiconductor manufacturing technologies can use different dielectric materials for forming the thin gate oxide areas, in addition to or instead of oxide. Those skilled in the art will understand that the mask for depositing or growing the dielectric can have shaped openings positioned to overlap the active area, in the same manner as previously described for the OD2 mask used to define the thin gate oxide area of the anti-fuse transistor.

Those skilled in the art will understand that the OD2 mask with openings to define thin gate oxide areas can be an assembly of smaller unit sub-mask shapes tiled together in a repeating pattern, each having a full opening defined therein, or a portion of an opening defined therein such that the mating of adjacent tiles will result in an enclosed opening.

The above-described embodiments of the present invention are intended to be examples only. Alterations, modifications and variations may be effected to the particular embodiments by those of skill in the art without departing from the scope of the invention, which is defined solely by the claims appended hereto. 

What is claimed is:
 1. A method of forming a variable thickness gate oxide for an anti-fuse transistor, comprising the steps of: growing a first oxide in a channel region of the anti-fuse transistor; removing the first oxide from a thin oxide area of the channel region; thermally growing a second oxide in the thin oxide area and in a thick gate oxide area of the channel region under the first oxide, and a combination of the first oxide and the second oxide in the thick gate oxide area has a thickness greater than the second oxide in the thin oxide area; and forming a diffusion region adjacent the thick oxide area for receiving current from the channel region.
 2. The method of claim 1, wherein thermally growing includes growing the second oxide in the thin oxide area at a first rate and growing the second oxide in the thick gate oxide area at a second rate less than the first rate.
 3. The method of claim 2, wherein growing the second oxide in the thin oxide area at a first rate includes consuming a substrate surface of the thin oxide area to a first depth, and growing the second oxide in the thick gate oxide area includes consuming a substrate surface of the thick gate oxide area to a second depth less than the first depth.
 4. The method of claim 3, wherein thermally growing includes forming an angled oxide area between the thick gate oxide area and the thin gate oxide area, the angled oxide area having a thickness different from the combination of the first oxide and the second oxide in the thick gate oxide area, and different from the second oxide in the thin oxide area.
 5. The method of claim 4, further including forming a common gate over the first oxide the second oxide, and the angled oxide area.
 6. The method of claim 1, wherein the second oxide under the first oxide is thinner than the second oxide in the thin oxide area.
 7. The method of claim 1, further including forming a bitline contact in electrical contact with the diffusion region for sensing a current from the common gate when a conductive link is formed between the channel and the common gate.
 8. An anti-fuse memory cell having a variable thickness gate oxide comprising: a channel region in a substrate; a first oxide in a thick oxide area of the channel region; and, a second oxide thermally grown in a thin oxide area of the channel region and in the thick oxide area underneath the first oxide; a diffusion region adjacent to the thick oxide area for receiving current from the channel region; isolation adjacent to the thin gate oxide area; and a gate over the first oxide and the second oxide.
 9. The anti-fuse memory cell of claim 8, wherein the second oxide under the first oxide is thinner than the second oxide in the thin oxide area.
 10. The anti-fuse memory cell of claim 9, wherein a combination of the first oxide and the second oxide in the thick oxide area has a thickness greater than the second oxide in the thin oxide area.
 11. The anti-fuse memory cell of claim 10, wherein the second oxide in the thin oxide area extends into the substrate to a first depth, and the second oxide in the thick oxide area extends into the substrate to a second depth less than the first depth.
 12. The anti-fuse memory cell of claim 8, further including an angled oxide area between the thick gate oxide area and the thin gate oxide area, the angled oxide area having a thickness different from the combination of the first oxide and the second oxide in the thick gate oxide area, and different from the second oxide in the thin oxide area.
 13. The anti-fuse memory cell of claim 8, wherein the gate is connected to a wordline.
 14. The anti-fuse memory cell of claim 13, wherein the diffusion region is connected to a bitline.
 15. The anti-fuse memory cell of claim 13, further including an access transistor adjacent to the diffusion region, and another diffusion region adjacent to the access transistor.
 16. The anti-fuse memory cell of claim 15, wherein the another diffusion region is connected to a bitline.
 17. The anti-fuse memory cell of claim 16, wherein the access transistor has a gate oxide thickness corresponding to the combination of the first oxide and the second oxide in the thick gate oxide area. 